NXP Semiconductors BF824,215 Collector- Emitter Voltage Vceo Max: - 30 V Configuration: Single Continuous Collector Current: - 25 mA Current - Collector (ic) (max): 25mA Current - Collector Cutoff (max): - Dc Collector/base Gain Hfe Min: 25 Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 4mA, 10V Emitter- Base Voltage Vebo: - 4 V Frequency - Transition: 450MHz ID_COMPONENTS: 1950320 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: - 25 mA Maximum Operating Frequency: 450 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-23-3, TO-236-3, Micro3?„?, SSD3, SST3 Power - Max: 250mW Power Dissipation: 250 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: - Voltage - Collector Emitter Breakdown (max): 30V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 30 V Collector- Emitter Voltage VCEO Max: - 30 V Emitter- Base Voltage VEBO: - 4 V Maximum DC Collector Current: - 25 mA Gain Bandwidth Product fT: 450 MHz DC Collector/Base Gain hfe Min: 25 DC Current Gain hFE Max: 25 at 1 mA at 10 V Maximum Power Dissipation: 250 mW Factory Pack Quantity: 3000 Part # Aliases: BF824 T/R Other Names: 933722350215, BF824 T/R